?2002 fairchild semiconductor corporation sgl60n90dg3 rev. a1 igbt sgl60n90dg3 sgl60n90dg3 general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for induction heating applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.0 v @ i c = 60a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgl60n90dg3 units v ces collector-emitter voltage 900 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c60 a collector current @ t c = 100 c42 a i cm (1) pulsed collector current 120 a i f diode continuous forward current @ t c = 100 c15 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c 180 w maximum power dissipation @ t c = 100 c72 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.69 c / w r jc (diode) thermal resistance, junction-to-case -- 2.08 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w applications home appliances, induction heaters, induction heating jars, and microwave ovens. g c e to-264 g c e g c e
sgl60n90dg3 rev. a1 sgl60n90dg3 ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 900 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 500 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -- 1.4 1.8 v i c = 60a , v ge = 15v -- 2.0 2.7 v dynamic characteristics c ies input capacitance v ce =10v , v ge = 0v, f = 1mhz -- 6500 -- pf c oes output capacitance -- 250 -- pf c res reverse transfer capacitance -- 220 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60a, r g = 51 ? , v ge =15v, resistive load, t c = 25 c -- 250 400 ns t r rise time -- 450 700 ns t d(off) turn-off delay time -- 450 700 ns t f fall time -- 250 400 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v -- 260 300 nc q ge gate-emitter charge -- 70 -- nc q gc gate-collector charge -- 60 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a -- 1.2 1.7 v i f = 60a -- 1.75 2.0 v t rr diode reverse recovery time i f = 60a di/dt = 20 a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 900v -- 0.05 2 ua
sgl60n90dg3 rev. a1 sgl60n90dg3 ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 012345 0 20 40 60 80 100 20v 15v 10v 9v 8v 7v v ge = 6v common emitter t c = 25 collector current, i c [a] collector-emitter voltage, v ce [v] 0123 0 20 40 60 80 100 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 0 1 2 3 common emitter v ge = 15v 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] case temperature, t c [ ] 4 8 12 16 20 0 2 4 6 8 10 collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] common emitter t c = -40 80a 60a 30a i c = 10a 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 25 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 gate-emitter voltage, v ge [v] collector-emitter voltage, v ce [v] common emitter t c = 125 80a 60a 30a i c = 10a
sgl60n90dg3 rev. a1 sgl60n90dg3 ?2002 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. switching characteristics vs. gate resistance fig 9. switching characteristics vs. collector current fig 10. gate charge characteristics fig 11. soa characteristics 0 50 100 150 200 10 100 1000 10000 v cc = 600v i c = 60a v ge = 15v t c = 25 tdoff tf tdon tr switching time [ns] gate resistance, r g [ ? ] 0.1 1 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 10 20 30 40 50 60 100 1000 v cc = 600v r g = 51 v ge = 15v t c = 25 tdoff tf tdon tr swing time [ns] collector current, i c [a] 0 100 200 300 0 3 6 9 12 15 common emitter v cc = 600v, r l = 10 ? t c = 25 gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 curve must be darated linearly with increase in temperature 10us 100us 1ms 10ms dc operation i c max. (pulsed) i c max. (continuous) collector current , i c [a] collector-emitter voltage, v ce [v] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response, zthjc [ o c/w] rectangular pulse duration [sec] fig 12. transient thermal impedance of igbt pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
sgl60n90dg3 rev. a1 sgl60n90dg3 ?2002 fairchild semiconductor corporation 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f = 60a t c = 25 di/dt [a/ ? ] reverse recovery time, t rr [us] 0 20 40 60 80 100 120 reverse recovery current, i rr [a] fig 14. reverse recovery characteristics vs. di/dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 t c = 100 ------ forward voltage, v fm [v] forward current, i f [a] fig 17. junction capacitance 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 25 t c = 150 ------ reverse curent, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 capacitance, c j [pf] reverse voltage, v r [v] 10 20 30 40 50 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i rr t rr forward current, i f [a] reverse recovery time, t rr [us] 0 2 4 6 8 10 12 14 16 di/dt = -20a/ ? t c = 25 reverse recovery current, i rr [a]
?2002 fairchild semiconductor corporation sgl60n90dg3 rev. a1 sgl60n90dg3 package dimension 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h5 ?2002 fairchild semiconductor corporation star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? spm? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx?
product folder - fairchild p/n sgl60n90dg3 - copak discrete igbt fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgl60n90dg3 copak discrete igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging | models general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for induction heating applications. back to top features l high speed switching l low saturation voltage : v ce(sat) = 2.1 v @ i c = 60a l high input impedance l built-in fast recovery diode back to top applications home appliances, induction heaters, induction heating jars, and microwave ovens back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging file:///c|/pdf/sgl60n90dg3.html (1 of 2) [27-jul-02 4:38:57 pm]
product folder - fairchild p/n sgl60n90dg3 - copak discrete igbt product product status pricing* package type leads packing method sgl60n90dg3tu full production $4.64 to-264 3 rail sgl60n90dg3m1tu full production $4.64 to-264 3 rail SGL60N90DG3YDTU full production $4.64 to-264 3 rail * 1,000 piece budgetary pricing back to top models package & leads condition software version revision date pspice to-264-3 electrical 9.2 apr 3, 2001 back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/pdf/sgl60n90dg3.html (2 of 2) [27-jul-02 4:38:57 pm]
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